L. Oberbeck

Atomically Precise Placement of Single Dopants in Si

Steven R. Schofield, Neil J. Curson, M. Y. Simmons et al. · Physical Review Letters · 2003 · 403 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

L. Oberbeck, M. Y. Simmons, Kuan Eng Johnson Goh et al. · Nano Letters · 2004 · 162 citations

Engineering, Materials Engineering, Materials Science +17

Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells

N. Jensen, Uwe Rau, R. M. Hausner et al. · Journal of Applied Physics · 2000 · 121 citations

Engineering, Electrical Engineering, Materials Science +17

Realization of Atomically Controlled Dopant Devices in Silicon

F. J. Rueß, Wilson Pok, T. C. G. Reusch et al. · Small · 2007 · 116 citations

Engineering, Materials Engineering, Materials Science +17

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

L. Oberbeck, Neil J. Curson, M. Y. Simmons et al. · Applied Physics Letters · 2002 · 99 citations · Full text

Engineering, Materials Engineering, Materials Science +17