E. L. Muñoz

Charge distribution and hyperfine interactions in the vicinity of impurity sites in In 2 O 3 doped with Fe, Co, and Ni

C. Sena, M. S. Costa, E. L. Muñoz et al. · Journal of Magnetism and Magnetic Materials · 2015 · 31 citations

Engineering, Physics, O 3 +12

Ab Initio Study of Structural, Electronic, and Hyperfine Properties of n-type SnO₂:Ta Semiconductor

G. N. Darriba, E. L. Muñoz, L. A. Errico et al. · The Journal of Physical Chemistry C · 2014 · 20 citations · Full text

Engineering, Electronic Structure, Semiconductor Nanostructures +16

Dynamic hyperfine interactions in 111In(111Cd)-doped ZnO semiconductor: PAC results supported by ab initio calculations

E. L. Muñoz, Marcio Eduardo Mercurio, M. R. Cordeiro et al. · Physica B Condensed Matter · 2011 · 13 citations

Ii-vi Semiconductor, Engineering, Physics +10

Electric‐field gradient characterization at ¹⁸¹Ta impurities in sapphire single crystals

M. Rentería, G. N. Darriba, L. A. Errico et al. · physica status solidi (b) · 2005 · 13 citations

Engineering, Pac Experiments, Magnetic Resonance +17

Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (¹¹¹In → )¹¹¹Cd-Doped SnO₂ Semiconductor: <i>Ab Initio</i> Modeling of the Electron-Capture-Decay After-Effects Phenomenon

G. N. Darriba, E. L. Muñoz, A. W. Carbonari et al. · The Journal of Physical Chemistry C · 2018 · 13 citations · Full text

Engineering, Electronic Structure, Semiconductors +16