M. Rentería

Anisotropic Relaxations Introduced by Cd Impurities in Rutile<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="bold">T</mml:mi><mml:mi mathvariant="bold">i</mml:mi><mml:msub><mml:mi mathvariant="bold">O</mml:mi><mml:mn mathvariant="bold">2</mml:mn></mml:msub></mml:math>: First-PrinciplesCalculations and Experimental Support

L. A. Errico, G. Fabricius, M. Rentería et al. · Physical Review Letters · 2002 · 65 citations · Full text

Engineering, Magnetic Resonance, Electronic Structure +20

Site localization of Cd impurities in sapphire

G. N. Darriba, M. Rentería, Helena M. Petrilli et al. · Physical Review B · 2012 · 33 citations · Full text

Ii-vi Semiconductor, Local Environment, Engineering +15

Structural properties and the pressure-induced C → A phase transition of lanthanide sesquioxides from DFT and DFT + U calculations

D. Richard, L. A. Errico, M. Rentería · Journal of Alloys and Compounds · 2015 · 29 citations

Materials Science, Transition Metal Chalcogenides, Pressure-induced C +8

Cd in SnO: Probing structural effects on the electronic structure of doped oxide semiconductors through the electric field gradient at the Cd nucleus

L. A. Errico, M. Rentería, Helena M. Petrilli · Physical Review B · 2007 · 28 citations

Engineering, Electronic Structure, Semiconductors +20

Precision of Electric-Field Gradient Predictions by Density Functional Theory and Implications for the Nuclear Quadrupole Moment and Its Error Bar of the¹¹¹Cd 245 keV 5/2⁺Level

L. A. Errico, Kurt Lejaeghere, J. Runco et al. · The Journal of Physical Chemistry C · 2016 · 27 citations · Full text