Akinori Nishizawa

An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Yasushige Mukunoki, Kentaro Konno, Tsubasa Matsuo et al. · IEEE Transactions on Power Electronics · 2018 · 55 citations

Sic-mosfet S., Engineering, Power Electronics Converter +16

Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification

Yasushige Mukunoki, Yuta Nakamura, Kentaro Konno et al. · IEEE Transactions on Industry Applications · 2018 · 42 citations

Device Modeling, Electrical Engineering, Internal Stray Capacitances +13

Electro-thermal co-simulation of two parallel-connected SiC-MOSFETs under thermally-imbalanced conditions

Yasushige Mukunoki, Takeshi Horiguchi, Akinori Nishizawa et al. · 2018 · 20 citations

Device Modeling, Electrical Engineering, Boost Chopper +13

Modeling of a silicon-carbide MOSFET with focus on internal stray capacitances and inductances, and its verification

Yasushige Mukunoki, Takeshi Horiguchi, Yasushi Nakayama et al. · 2017 · 15 citations

Device Modeling, Electrical Engineering, Internal Stray Capacitances +13

6.5-kV Full-SiC Power Module (HV100) with SBD-embedded SiC-MOSFETs

Junichi Nakashima, Akihisa Fukumoto, Yoshiko Obiraki et al. · PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management · 2018 · 15 citations

Electrical Engineering, Engineering, Sbd-embedded Sic-mosfet +9