Statistics
Publications
42
Citations
1.4K
H-Index
23
Active since
1988
Moo‐Sung Kim is an author at Korea Institute of Science and Technology specializing in engineering, applied physics, and electrical engineering.
Publications per year
1988–2017
42
42
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory
Chulbum Kim, Doo-Hyun Kim, Woopyo Jeong et al. · IEEE Journal of Solid-State Circuits · 2017 · 113 citations
Non-volatile Memory, Engineering, Emerging Memory Technology +16
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers
Dongku Kang, Woopyo Jeong, Chulbum Kim et al. · 2016 · 84 citations
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate
Jae-Woo Im, Woopyo Jeong, Doo-Hyun Kim et al. · 2015 · 83 citations
Non-volatile Memory, Engineering, Emerging Memory Technology +20
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