Key Aspects on Development of High Efficiency Heterojunction and IBC-Heterojunction Solar Cells: Towards 22% Efficiency on Industrial Size

D. Muñoz, Thibaut Desrues, A.‐S. Ozanne, Sylvain De Vecchi, Frédéric Jay, F. Souche, Ngoc Duy Nguyen, C. Denis, Carmen Arnal, J. Coignus,

EU PVSEC · 2012 · 15 citations · 0 references

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Abstract

In this paper, we show the latest results of CEA-INES on the development of HET and IBC-HET solar cells. We have focused the research on the optimization of the amorphous (a-Si:H) and TCO layers to increase Jsc and FF values on HET cells. Moreover, we have fabricated silver –free HET solar cells with a Copper electroplating metallization. We also show our latest results obtained with a new structure combining HET and IBC (Interdigitated Back Contact) concepts: the SLASH IBC cell (Structuring by Laser Ablation of Silicon Heterojunction). Short-circuit current issues for both standard - and IBC – HET solar cells are discussed in this paper. Efficiencies higher than 22% have been achieved on 100 cm2 standard HET solar cells and close to 20% on 25 cm2 SLASH IBC cells.