Dynamic response of tunneling magnetoresistance sensors to nanosecond current step

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

Takehiro Maruyama, Yoichi Shiota, Takayuki Nozaki et al. · Nature Nanotechnology · 2009 · 1.3K citations

Natural Sciences, Materials Science, Physics +12

Frequency-dependent magnetoresistance and magnetocapacitance properties of magnetic tunnel junctions with MgO tunnel barrier

Prahallad Padhan, P. LeClair, Arunava Gupta et al. · Applied Physics Letters · 2007 · 55 citations

Natural Sciences, Materials Engineering, Materials Science +17

Magnetic Tunnel Junctions Based on Out-of-Plane Anisotropy Free and In-Plane Pinned Layer Structures for Magnetic Field Sensors

P. Wiśniowski, J. Wrona, T. Stobiecki et al. · IEEE Transactions on Magnetics · 2012 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Magnetic field sensing characteristics of MgO based tunneling magnetoresistance devices with Co40Fe40B20 and Co60Fe20B20 electrodes

P. Wiśniowski, Michał Dąbek, Susana Cardoso et al. · Sensors and Actuators A Physical · 2013 · 26 citations

Natural Sciences, Electrical Engineering, Materials Engineering +16

Reduction of low frequency magnetic noise by voltage-induced magnetic anisotropy modulation in tunneling magnetoresistance sensors

P. Wiśniowski, Michał Dąbek, Witold Skowroński et al. · Applied Physics Letters · 2014 · 21 citations

Natural Sciences, Electrical Engineering, Electromagnetism +16