Electronics Letters · 1993 · 27 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsEpitaxial GrowthOptical SourcesQuantum Well DevicesSemiconductor HeterostructuresSemiconductor LasersStrain EngineeringBandwidthHeterostructure DevicesQuantum Well GrowthQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresThermal Management In Semiconductor LasersThermal Stability
A 20 GHz bandwidth VUG (V-on-U groove) DFB GalnAsP laser based on a zero net strain quaternary quantum well active structure grown at a constant phosphorus/arsenic ratio is described. The active structure is designed such that emission wavelength has excellent thermal stability in order to avoid gain peak shifts during two epitaxial regrowths. Using this active material, the Letter shows that highperformance high-speed DFB devices can be designed and fabricated.
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