Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

Multidimensional quantum well laser and temperature dependence of its threshold current

Yasuhiko Arakawa, H. Sakaki · Applied Physics Letters · 1982 · 3.3K citations

Categoryquantum Electronics, Engineering, Laser Science +20

GaAs, AlAs, and Al<i>x</i>Ga1−<i>x</i>As: Material parameters for use in research and device applications

Sadao Adachi · Journal of Applied Physics · 1985 · 3.2K citations

Materials Engineering, Semiconductors, Materials Science +15

Semiconductor physics and devices

Materials Today · 2006 · 797 citations · Full text

Semiconductors, Semiconductor Devices, Electrical Engineering +13

Schottky-Barrier Electroreflectance: Application to GaAs

D. E. Aspnes, A. A. Studna · Physical review. B, Solid state · 1973 · 589 citations

Engineering, Electronic Structure, Spectroscopic Property +18

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

Ryuji Oshima, Ayami Takata, Yoshitaka Okada · Applied Physics Letters · 2008 · 311 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14