Concepedia

Efficient high-speed direct modulation in <i>p</i> -doped In <sub>0.35</sub> Ga <sub>0.65</sub> As/GaAs multiquantum well lasers

S. Weisser, J.D. Ralston, E.C. Larkins, I. Esquivias, P.J. Tasker, J. Rosenzweig

Electronics Letters · 1992 · 37 citations · 4 references

DOI

Concepts

Abstract

The authors demonstrate p-type modulation-doped strainedlayer In0.35 Ga0.65As/GaAs multiquantum well lasers which achieve a 3dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50mA in a simple 3 × 200 μm2 mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.

References

4

High-speed InGaAs/GaAs strained multiple quantum well lasers with low damping

Radhakrishnan Nagarajan, Toru Fukushima, John E. Bowers et al. · Applied Physics Letters · 1991 · 78 citations

, , +17

Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

S. D. Offsey, W.J. Shcaff, P.J. Tasker et al. · IEEE Photonics Technology Letters · 1990 · 68 citations

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Multiquantum well strained-layer lasers with improved low frequency response and very low damping

L. F. Lester, S.S. O'Keefe, W. J. Schaff et al. · Electronics Letters · 1992 · 29 citations

, , +17

Differential gain of GaAs/AlGaAs quantum well and modulation-doped quantum well lasers

Takuji Takahashi, M. Nishioka, Yasuhiko Arakawa · Applied Physics Letters · 1991 · 22 citations

, , +17