Efficient high-speed direct modulation in <i>p</i> -doped In _0.35 Ga _0.65 As/GaAs multiquantum well lasers

Abstract

The authors demonstrate p-type modulation-doped strainedlayer In0.35 Ga0.65As/GaAs multiquantum well lasers which achieve a 3dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50mA in a simple 3 × 200 μm2 mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.