Field Dependent Self-Heating Effects in High-Power AlGaN/GaN HEMTs

Abstract

In this work, we investigate the self-heating behaviour of high-power AlGaN/GaN HEMTs. Micro-Raman thermography measurements were carried out to determine the device temperature at different power and applied voltage levels. We found that drain voltage influences the device temperature distribution when the dissipated power is kept constant by applying a gate bias. This effect was then investigated and explained by use of numerical electro-thermal device simulations.