Robustness of 1.2kV SiC MOSFET devices

Characterization, Modeling, and Application of 10-kV SiC MOSFET

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Engineering, Electrical Engineering, Microelectronics +16

Silicon carbide and diamond for high temperature device applications

M. Willander, M. Friesel, Q. Wahab et al. · Journal of Materials Science Materials in Electronics · 2005 · 286 citations

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Investigation of 1.2 kV SiC MOSFET for high frequency high power applications

Honggang Sheng, Zheng Chen, Fred Wang et al. · 2010 · 91 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Thermal instability effects in SiC Power MOSFETs

Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto et al. · Microelectronics Reliability · 2012 · 49 citations

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Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application

D. Othman, Mounira Berkani, Sébastien Lefebvre et al. · Microelectronics Reliability · 2012 · 44 citations

Engineering, Aerospace Engineering, Electrical Engineering +16