Light Induced Degradation of Rear Passivated mc-Si Solar Cells

Abstract

We compare the degradation behaviour of rear-passivated high efficiency silicon solar cells processed from mc-, Cz-, and cast-mono Si materials. We observe that cells processed from mc-Si unexpectedly show a stronger degradation than cells processed from cast-mono or Cz-Si. Using Ga-doped mc-Si, we prove that the degradation observed on mc-Si cannot be attributed to B-O complex formation or FeB pair dissociation. For castmono, a similar degradation characteristic as for mc-Si is observed, however, the degradation is much less pronounced, making this material class a favourable candidate for processing of high efficiency rear passivated solar cells.