Bifunctional Energy Efficient (Ga,Ge)₂O₃:Cr³⁺,Ni²⁺ Phosphor for Shortwave Infrared Optical Applications

Abstract

High Resolution Image Download MS PowerPoint Slide A bifunctional (Ga,Ge) 2 O 3:Cr 3+,Ni 2+ phosphor system for optical fiber amplifiers and light-emitting diode applications was investigated. By applying a solid-state reaction method, one Ga 1.98–2 x Ge x O 3:0.02Cr 3+, x Ni 2+ phosphor series is successfully prepared. The optimized composition demonstrated a broadband shortwave infrared (SWIR) emission at 1430 nm and a 10.6% absolute internal quantum efficiency value of Ni 2+ emission. Electron paramagnetic resonance spectroscopy revealed detailed insights into the local environment of Cr 3+ and its alteration by introducing Ni 2+ dopants. When the laser-heated pedestal growth method was used, the grown crystal fibers exhibited promising characteristics for optical communication applications, particularly in the 1300–1600 nm telecommunication band. The dual functionality of the material was demonstrated by the fabrication of SWIR optical fiber amplifiers and light sources. This research introduces a versatile material platform that effectively addresses the challenges in optical fiber communications while offering new possibilities for SWIR light source applications.