Rapid Thermal Selenization Enhanced Efficiency in Sb₂Se₃ Thin Film Solar Cells with Superstrate Configuration

Abstract

Antimony selenide (Sb 2 Se 3 ) is a promising material for solar energy conversion due to its low toxicity, high stability, and excellent light absorption capabilities. However, Sb 2 Se 3 films produced via physical vapor deposition often exhibit Se-deficient surfaces, which result in a high carrier recombination and poor device performance. The conventional selenization process was used to address selenium loss in Sb 2 Se 3 solar cells with a substrate configuration. However, this traditional selenization method is not suitable for superstrated Sb 2 Se 3 devices with the window layer buried underneath the Sb 2 Se 3 light absorber layer, as it can lead to significant diffusion of the window layer material into Sb 2 Se 3 and damage the device. In this work, we have demonstrated a rapid thermal selenization (RTS) technique that can effectively selenize the Sb 2 Se 3 absorber layer while preventing the S diffusion from the buried CdS window layer into the Sb 2 Se 3 absorber layer. The RTS technique significantly reduces carrier recombination loss and carrier transport resistance and can achieve the highest efficiency of 8.25%. Overall, the RTS method presents a promising approach for enhancing low-dimensional chalcogenide thin films for emerging superstrate chalcogenide solar cell applications.