Engineering energy bands in 0D–2D hybrid photodetectors: Cu-doped InP quantum dots on a type-III SnSe₂/MoTe₂ heterojunction

Abstract

and a swift response time of 1.16 ms/1.14 ms with stable operation. These results demonstrate that energy band engineering of Cu-doped QDs can significantly enhance the performance of 2D type-III heterojunctions in the visible range, laying a foundation for future gate-tunable optoelectronic devices.