APL Materials · 2024 · 14 citations · 42 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsThin FilmsAlloysFerromagnetic MaterialsMagnetic Properties Of SolidsMagnetic Recording MaterialsSpintronic MaterialsSpintronicsAnnealingCompositionComposition OptimizationHeusler AlloysMagnetoresistanceSpin PolarizationSpin-transfer TorqueTorque Efficiency
Half-metallic ferromagnetic Heusler alloys having high spin polarization are promising candidates to realize large magnetoresistance (MR) ratio and high spin-transfer torque (STT) efficiency in next-generation spintronic devices. Since the Heusler alloy properties are sensitive to composition, optimizing the composition is crucial for enhancing device performance. Here, we report the fabrication of high-performance current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices using Co2MnxFe1−xGe (0 ≤ x ≤ 1) Heusler alloy, employing a high-throughput and detailed composition optimization method. The method combined composition-gradient films and local measurements to enable the composition variation from Co2FeGe to Co2MnGe to be efficiently studied on a single library sample with a small composition interval. The CPP-GMR devices fabricated from stacks annealed at 250 °C showed a clear composition dependence of MR with the maximum of MR ratio ∼38% in the Mn-rich region of x = 0.85. By increasing the annealing temperature to 350 °C, the MR ratio increased to ∼45% along with high STT efficiency ∼0.6 in the broad composition range of 0.2 ≤ x ≤ 0.7. The optimal composition for the highest MR changed with annealing temperature because of the stability of the GMR stack being higher in the lower x range. The record high MR for the all-metal CPP-GMR devices, at low annealing temperature of 250 °C was achieved by the detailed composition optimization. These results present the high potential of Co2MnxFe1−xGe and provide a comprehensive guidance on the composition optimization for achieving large MR ratio and high STT efficiency in the CPP-GMR devices.
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