Suppressing the Dark Current Under Forward Bias for Dual‐Mode Organic Photodiodes

Abstract

Abstract Tremendous research efforts are developed to suppress the reverse dark current ( J d ) and enhance the responsivity of organic photodiodes (OPDs). The functional layers of traditional OPDs usually follow the principle of energy level alignment to make unobstructed photo‐carriers transport under reverse bias, but this inevitably leads to a large forward J d . Herein, a universal strategy is proposed to manipulate the carrier dynamics and effectively suppress the forward J d of OPDs, that is, tuning the energy level and electron traps of the anode interface layers (AILs). The bandgap and electron traps of typical organometallic chelate AIL (PEIE‐Co) can be well controlled by adjusting the component ratio of PEIE and metal ions. The wide bandgap increases the carrier injection barrier under reverse and forward bias, endowing OPD with a much lower J d ; the electron traps induce hole tunneling injection by capturing photo‐generated electrons under forward bias, thereby enabling the photomultiplication effect. The obtained OPD exhibits photoconductive/photomultiplication working mode at reverse/forward bias and the specific detectivity approaches ≈10 13 /10 12 Jones, showing promise for adaptively detecting faint and strong light. This study presents an intelligent strategy to achieve dual‐mode OPDs, paving the way for the multifunctional development of photodetectors.