Ultra‐Low Threshold Voltage in N‐Type Organic Electrochemical Transistors Enabled by Organic Mixed Ionic‐Electronic Conductors with Dual Electron‐Withdrawing Substitutions

Abstract

Abstract Achieving low threshold voltage ( V th ) in organic electrochemical transistors (OECTs) is essential for minimizing power consumption and enhancing sensitivity in bioelectronic devices. However, obtaining OECT materials with ultra‐low V th , close to 0 V for n‐type conjugated polymers remains challenging. Here, a conjugated polymer FBDOPV‐CNTVT is introduced, which features a rigid backbone structure and high electron deficiency, leading to an exceptionally low lowest unoccupied molecular orbital (LUMO) energy level of −4.67 eV, achieved through dual electron‐withdrawing substitutions. With its ultra‐low LUMO energy level, FBDOPV‐CNTVT exhibits high susceptibility to electrochemical doping, even demonstrating efficient doping near 0 V. Consequently, the OECT device employing FBDOPV‐CNTVT as the active material shows an ultra‐low V th of 7.5 mV, setting a new record for the V th of n‐type OECT devices. Furthermore, FBDOPV‐CNTVT exhibits a µC * value of 6.13 F cm −1 V −1 s −1 and retains ≈85% of its current after 2000 s cycling. This study highlights the potential of conjugated polymers with dual electron‐withdrawing substitutions to achieve ultra‐low LUMO energy levels, effectively reducing the V th of n‐type OECT devices and promising advancements in bioelectronics.