Advanced Functional Materials · 2024 · 23 citations · 24 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsOxide SemiconductorsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSemiconductor Thin FilmsTransparent Conducting OxidesHeterojunction DevicesIndium Tin Oxide Thin FilmsPower ConversionPower Conversion EfficiencyResistivityTin OxidesTransparent Conductive FilmsTransparent Conductive Oxides
Abstract Indium‐based transparent conductive oxide (TCO) films are widely used in various photoelectric devices including silicon heterojunction (SHJ) solar cells. However, high cost of indium‐based TCO films is not conducive to mass production of the SHJ solar cells. A variety of indium‐free or indium‐less TCOs are explored and utilized presently. Here, SnO x films are deposited by reactive plasma deposition (RPD) with metal tin as the evaporation source. The metal‐reaction deposited SnO x films feature low resistivity (<2 × 10 −3 Ω cm), high mobility (35.93 cm 2 V −1 S −1 ), and wide optical bandgap (3.64 eV). A power conversion efficiency (PCE) of 25.33% is achieved on the champion SHJ solar cell using the metal‐reaction deposited SnO x as the back TCO layer, which indicates the application potential of the metal‐reaction‐deposited SnO x as a low‐cost substitute for In‐based TCOs in SHJ solar cells and other photoelectric devices.
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