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Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering

SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineeringCompound SemiconductorApplied PhysicsGallium OxideOptoelectronic DevicesBand EngineeringOptoelectronicsN-β-ga2o3/n-si HeterojunctionInterface Lattice