Non-damaging growth and band alignment of p-type NiO/β-Ga₂O₃ heterojunction diodes for high power applications

Abstract

We developed NiO/β-Ga 2 O 3 heterojunction power devices with a breakdown voltage of −644 V, a low leakage current of about 1 × 10 −6 (A cm −2 ) at −600 V and an on-resistance of 10.85 mΩ cm 2 with high thermal stability with the operation temperature higher than 130 °C.