ACS Applied Materials & Interfaces · 2024 · 28 citations · 52 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionPhotodetectorsQuantum DotsSemiconductor NanomaterialsTwo-dimensional NanomaterialsTwo-dimensional SemiconductorsHeterostructure PhotodetectorsPhotodetectionPhotodetector MaterialsPhotodetector ResponsivityTwo-dimensional HeterostructuresTwo-dimensional Material PhotodetectorsTwo-dimensional Semiconductor HeterostructuresVan Der Waals Heterostructures
The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS 2 and solution-processed MoS 2 quantum dots (QDs). The mixed dimensionality of 2D (ReS 2 ) and zero-dimensional (0D) MoS 2 QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS 2 and MoS 2 QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 10 2, 3.3 × 10 2, and 2.6 × 10 2 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.
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Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
Andrea Splendiani, L. Sun, Yuanbo Zhang et al. · Nano Letters · 2010 · 9.4K citations
Few-Layer MoS<sub>2</sub>: A Promising Layered Semiconductor
Rudren Ganatra, Qing Zhang · ACS Nano · 2014 · 1.4K citations
Bandgap engineering of two-dimensional semiconductor materials
Andrey Chaves, Javad G. Azadani, Hussain Alsalman et al. · npj 2D Materials and Applications · 2020 · 1.3K citations · Full text
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling
Sefaattin Tongay, Hasan Şahin, Changhyun Ko et al. · Nature Communications · 2014 · 1.1K citations · Full text
Large-Area Epitaxial Monolayer MoS<sub>2</sub>
Dumitru Dumcenco, Dmitry Ovchinnikov, Kolyo Marinov et al. · ACS Nano · 2015 · 875 citations · Full text