Three-step field-plated β-Ga₂O₃ Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown

Abstract

Abstract A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/ β -Ga 2 O 3 Schottky barrier diodes (SBDs) and NiO/ β -Ga 2 O 3 heterojunction diodes (HJDs) is reported. The fabricated devices showed a low R on,sp of 6.2 mΩ cm 2 for SBDs and 6.8 mΩ cm 2 for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm 2 . The devices also showed low reverse leakage current (<1 mA cm −2 ) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-class β -Ga 2 O 3 diodes.