Multi‐Functional Platform for In‐Memory Computing And Sensing Based on 2D Ferroelectric Semiconductor α‐In₂Se₃

Abstract

Abstract 2D layered semiconductors with excellent light−matter interaction and atomic‐scale thickness have been envisioned as promising candidates for more than Moore and beyond Moore technologies. Here, for the first time, a multi‐functional platform is reported that is fabricated entirely from wrinkle‐free 2D ferroelectric semiconductor α‐In 2 Se 3 integrated with a photodetector, reconfigurable logic switching, and visual perception processing functions. The intensity‐ and wavelength‐dependent resistance is used to demodulate broadband optical information into electrical signals and perform reconfigurable logic switching. Moreover, the platform offers dynamically modulated photosensitive visual sensing in different working modes at the pixel level. Using photo‐assisted piezoresponse force microscopy, the optical‐engineered ferroelectric polarization switch behavior is explored. The platform has excellent sensitivity to both optical and electrical stimuli and can respond to lights in the visible to short‐wavelength infrared region in volatile/non‐volatile manner under gate voltage modulation, with a response of 98 mA W −1 (to 1800 nm light), a current on/off ratio of over 10 6 , and a high field‐effect mobility of 137.55 cm 2 V −1 s −1 . With its simple structure, unique photoelectric interaction, and controllable operating mechanism, the platform has the potential to simplify the complexity of neuromorphic computing circuitry systems, paving the way for high‐performance hybrid technologies suitable for artificial intelligence applications.