Heteroepitaxial growth of β-Ga₂O₃ thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering

Abstract

Abstract In this work, we demonstrate the first achievement in heteroepitaxial growth of β -Ga 2 O 3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic ( β -phase) structure with a monofamily { <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 01} plane was obtained. XRD pole figure shows ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> <mml:mo>̅</mml:mo> </mml:mover> </mml:math> 02) and (002) textures of the ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> <mml:mo>̅</mml:mo> </mml:mover> </mml:math> 01) β -Ga 2 O 3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of β -Ga 2 O 3 on diamond via sputtering, paving the way for scalable β -Ga 2 O 3 /diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.