Superconducting, Topological, and Transport Properties of Kagome Metals CsTi <sub>3</sub> Bi <sub>5</sub> and RbTi <sub>3</sub> Bi <sub>5</sub>

Xin-Wei Yi, Zheng-Wei Liao, Jing‐Yang You, Bo Gu, Gang Su

Research · 2023 · 25 citations · 57 references

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Abstract

The recently discovered ATi<sub>3</sub>Bi<sub>5</sub> (A=Cs, Rb) exhibit intriguing quantum phenomena including superconductivity, electronic nematicity, and abundant topological states. ATi<sub>3</sub>Bi<sub>5</sub> present promising platforms for studying kagome superconductivity, band topology, and charge orders in parallel with AV<sub>3</sub>Sb<sub>5</sub>. In this work, we comprehensively analyze various properties of ATi<sub>3</sub>Bi<sub>5</sub> covering superconductivity under pressure and doping, band topology under pressure, thermal conductivity, heat capacity, electrical resistance, and spin Hall conductivity (SHC) using first-principles calculations. Calculated superconducting transition temperature (<i>T</i><sub>c</sub>) of CsTi<sub>3</sub>Bi<sub>5</sub> and RbTi<sub>3</sub>Bi<sub>5</sub> at ambient pressure are about 1.85 and 1.92 K. When subject to pressure, <i>T</i><sub>c</sub> of CsTi<sub>3</sub>Bi<sub>5</sub> exhibits a special valley and dome shape, which arises from quasi-two-dimensional compression to three-dimensional isotropic compression within the context of an overall decreasing trend. Furthermore, <i>T</i><sub>c</sub> of RbTi<sub>3</sub>Bi<sub>5</sub> can be effectively enhanced up to 3.09 K by tuning the kagome van Hove singularities (VHSs) and flat band through doping. Pressures can also induce abundant topological surface states at the Fermi energy (<i>E</i><sub>F</sub>) and tune VHSs across <i>E</i><sub>F</sub>. Additionally, our transport calculations are in excellent agreement with recent experiments, confirming the absence of charge density wave. Notably, SHC of CsTi<sub>3</sub>Bi<sub>5</sub> can reach up to 226<i>ℏ</i> ·(e· Ω ·cm)<sup>-1</sup> at <i>E</i><sub>F</sub>. Our work provides a timely and detailed analysis of the rich physical properties for ATi<sub>3</sub>Bi<sub>5</sub>, offering valuable insights for further experimental verifications and investigations in this field.

References

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