IEEE Transactions on Power Electronics · 2023 · 21 citations · 17 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesConverter TopologiesIntegrated Circuit DesignLeakage Power ReductionWide-bandgap Semiconductor DevicesConverter Topology DesignConverter Topology OptimizationCurrent Injection EfficiencyFailure ProbabilityLeakageLine-commutated ConvertersOptimal DesignSwitching Loss Reduction
The hybrid line commutated converter topology has been verified to reduce the commutation failure probability effectively, but the reverse blocking integrated gate commutated thyristor (RB-IGCT) that meets the requirements of this topology has not yet been developed. This article focuses on the optimal design of the RB-IGCT with high blocking voltage, large <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state current, and high turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> capability. First, an emitter isolation structure is proposed to tune the low-level injection efficiency, and the forward leakage current can be reduced by 50% without degrading the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on-</small> state current. Then, a method for optimizing anode emitter is presented. A high-doped and shallow p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> emitter is preferred to control the current gain while ensuring a low <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state voltage. As to the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> capability, the corrugated p-base structure is used to independently improve the maximum controllable current (MCC). In addition to the corrugation amplitude, the effect of the corrugation width is verified by experiments. Finally, 8 kV RB-IGCT samples are fabricated and tested, which reach over 3 kA average <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state current and 5.5 kA MCC. This article not only provides a practical guidance to the design of the RB-IGCT, but also promotes the development of the HVdc transmission system.
17
IGCT-a new emerging technology for high power, low cost inverters
P. Steimer, H.E. Gruning, J. Werninger et al. · 2002 · 132 citations