Demonstration of the Hydrogen Passivated GaN HEMTs IC Platform

Abstract

This article presents comprehensive research on the 4-inch monolithic integrated circuit platform based on the hydro-gen passivated pGaN/AlGaN/GaN HEMTs technology. The com-parisons between <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$H_{2}$</tex> passivated device and traditional selectively etched pGaN gate device are made. The experimental results demonstrate that the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$H_{2}$</tex> passivation layer not only provides higher breakdown voltage and lower current collapse effect but also enhances <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{TH}$</tex> stability under gate stresses. The circuit components, such as the 2DEG resistor, capacitor, and diode, are verified under a high-temperature environment to exploit the advantage of All-GaN integration. The depletion mode device is seamlessly integrated by applying the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$H_{2}$</tex> passivated pGaN layer as the gate dielectric. This method no longer requires the growth of an additional gate dielectric layer, and the fabrication complexity can be reduced. The logic gates, comparator, and driver circuit are realized based on this achievement.