Dual-Junctions Field Effect Transistor Based on MoS₂/Te/MoS₂

Abstract

In the applications of low-power device design and large-scale integrated circuit, MOSFETs play an important role but suffer from the doping complexity and short channel effect when the technology node is further shrinking. Thus, it is of great interest to develop new transistor architecture with atomically thin channel materials to meet the demand for high-density integration and low-power consumption electronics. Here, we develop a dual-junctions field-effect transistor (DJFET) consisting of van der Waals MoS2/Te/MoS2 heterojunctions where the MoS2 on top and bottom serves as dual-gate and the tellurium (Te) in middle is the carrier transport channel. The novel transistor exhibits superior transfer and output characteristics with p-type behavior, high mobility of 270.3 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ </tex-math></inline-formula> and large transconductance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$16.4~\mu \text{S}$ </tex-math></inline-formula> , competing with widely-reported MOSFETs based on 2-D semiconductors. Additionally, the devices can be operated as a self-driven photodetector with a high responsivity of 879.2 mAW <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{1}}$ </tex-math></inline-formula> and a specific detectivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.47\times 10^{{11}}$ </tex-math></inline-formula> Jones. This work proposes a new dual-junctions transistor as a highly desirable candidate for next-generation electronic applications.