Effects of excess electrons/holes on fracture toughness of single-crystal Si

Abstract

This study demonstrates that bond strength can be enhanced by injecting excess electrons or holes into a material by electron beam irradiation. To determine the effect of excess electrons/holes on the interatomic bond strength, fracture toughness tests were performed on single-crystal Si micropillars under various electron-beam irradiation conditions. The fracture toughness under electron beam irradiation was 4%–11% higher than that under non-irradiated conditions. In particular, an increase in strength was large in tests performed under hole-injection conditions. Furthermore, in first-principles calculations of the tensile strength of excess electrons/hole-doped Si, the ideal tensile strength monotonically decreased with an injection in excess electrons and increased monotonically with the injection of holes. This is qualitatively consistent with the experimental result that the fracture toughness increases under hole-injection conditions.