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High-performance carbon nanotube field-effect transistors with electron mobility of 39.4 cm2V−1s−1 using anion–π interaction doping

Electrical EngineeringElectronic DevicesEngineeringCarbon-based MaterialNanoelectronicsApplied PhysicsNanotubesCharge Carrier TransportCharge TransportCarbon NanotubesAnion–π InteractionSemiconductor Device