Publication | Open Access
Electrical characteristics and photodetection mechanism of TiO<sub>2</sub>/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction
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Citations
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References
2022
Year
Electrical CharacteristicsWide-bandgap SemiconductorElectrical EngineeringEngineeringNovel TypePhotodetectorsPf EmissionNanoelectronicsField-effect TransistorPhotodetection MechanismApplied PhysicsAluminum Gallium NitrideGan Power DeviceOptoelectronic DevicesSchottky JunctionCategoryiii-v SemiconductorOptoelectronicsSemiconductor Device
A novel type of Schottky junction-based heterostructure UV detector integrates a AlGaN/GaN 2DEG field-effect transistor and a Ti/AlGaN Schottky junction. SE, PF emission and FN tunneling mechanisms are observed when the device is working at different reverse bias voltages.
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