The electrical and photosensitive characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) related to the oxygen vacancies V̈ _O are discussed. With the filling of V̈ _O of ratio from 14 to 8, the electron density of the a-IGZO channel decreases from 7.5 to 3.8 ( ×10 ¹⁶ cm ^-3 ); the saturation mobility of the TFT decreases from 3.1 to 1.4 cm ^-2 /(V · s); the threshold voltage increases from 7 to 11 V for the TFT with a lower on-current; and the subthreshold slope increases from 2.4 to 4.4 V/dec for the TFT with a higher interface defect density of 4.9 × 10 ¹¹ cm ^-2 , the worst electrical stability of V _th ~ 10 V, and a hysteresis-voltage decrease from 3.5 to 2 V. The photoreaction properties of a-IGZO TFTs are also sensitive to the oxygen-content-related absorption of the a-IGZO channel. With the lowest content of oxygen in the channel, the TFT has the largest photocurrent gain of 50 μA (V _g = 30 V; V _d = 10 V) and decrease in V _th ( V _th V) at a high light intensity. The light-induced change of TFT characteristics is totally reversible with the time constant for recovery of about 2.5 h.

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