Solution-Processed p-Type CuI Thin-Film Transistors With NAND Logic Function

Abstract

In this article, copper iodide (CuI) is used as the channel layer in thin-film transistors (TFTs) for the first time to realize the NAND logic function. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vphantom {_{\int }}$ </tex-math></inline-formula> TFTs are optimized by 80 °C annealing and have an ON/ OFF current ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.7\times10$ </tex-math></inline-formula> 2 and a field-effect mobility of 0.18 cm2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot \text{V}$ </tex-math></inline-formula> −1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot \text{s}$ </tex-math></inline-formula> −1, demonstrating good stability and reproducibility. Furthermore, by using chitosan with electric-double-layer (EDL) effect as the gate dielectric instead of standard silica, the operating voltage can be decreased to 2.0 V. The p-type CuI TFTs have the potential to be used in complementary electronic circuits with low energy consumption as well as portable sensors.