2022 · 19 citations · 8 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyFeedback AmplifiersHigh-frequency Semiconductor DevicesRadio-frequency Integrated CircuitsReceiver SystemsBandwidthConversion GainMixer CircuitsReceiver BandwidthReceiver DesignReceiver Front-endsTransimpedance Amplifier DesignTransimpedance Amplifiers
A mixer-first receiver frontend with resistive-feedback baseband is proposed. The baseband combination of G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> and transimpedance amplifier (TIA) is designed to cover a wide frequency range for high data rate applications. The N-path filtering at the RF side and enhanced filtering at the BB side inhibit out-of-band blocker interferences. The receiver is fabricated in a 65 nm CMOS. Measurement results display an NF of 2.3 dB and a conversion gain of 33.5 dB at 2 GHz f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LO</inf> . The in-band and out-of-band IIP3 are −7.5 dBm and 19 dBm respectively. The receiver core draws 34 mW in the signal path and occupies an active area of 0.31 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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Yuan-Ching Lien, Eric A.M. Klumperink, Bernard Tenbroek et al. · IEEE Journal of Solid-State Circuits · 2018 · 116 citations · Full text