80Gb/s NRZ Ge waveguide electro-absorption modulator

Abstract

We demonstrate a Ge electro-absorption modulator (EAM) in L band with a 3 dB electro-optical bandwidth beyond 67 GHz at −3 V bias voltage. The Eye diagram measurement shows a data rate of over 80 Gbps for non-return-to-zero on-off keying (NRZ-OOK) modulation at a voltage swing of 2.3 V pp and the wavelength of 1605 nm. Through the comparison of multi-device results, it is proved that the introduction of the annealing process after CMP can increase the mean static extinction ratio of the EAM from 7.27 dB to 11.83 dB, which confirms the manufacturability of the device. The dynamic power consumption of the device is 6.348 fJ/bit. The performance of our device is comprehensive. The Ge EAM device also has excellent performance as a photodetector (PD) in the C and L communication bands. The responsivity of the device is 1.04 A/W at the wavelength of 1610 nm, resulting in ∼0.87 mW of static power consumption at −3 V bias voltage under 0.28 mW of optical input and the 3 dB opto-electric bandwidth of the devices are beyond 43 GHz at −3 V bias.