High uniformity and stability of 1S1R directly stacked for high‐density cross‐point memory applications

Abstract

In this letter, the Ti‐doped NbO x ‐based selector is applied to SiNO x ‐based resistive random‐access memory (RRAM), forming Pt/NbO x (Ti‐doped)/SiNO x /Ti one selector‐one RRAM device (1S1R), to suppress the sneak path current. The fabricated 1S1R exhibits stable direct current (DC) endurance (> 200 cycles), suitable memory window (> 40), matched selectivity (> 40) and high uniformity of switching parameters. The capacity of the 1S1R array is about 1000 times larger than that of RRAM. More importantly, there is no intermediate metal in the 1S1R, which makes it be used in three‐dimensional (3D) vertical RRAM crossbar array. This work contributes to realize high‐density cross‐point 1S1R memory applications.