Optics Express · 2022 · 26 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesOptoelectronic DevicesSemiconductor Device MaterialsSemiconductor LasersThermal Properties Of SemiconductorsWide Band Gap SemiconductorsCurrent DensityEnergy Conversion EfficiencyLaser Irradiation ParametersOpen-circuit VoltagePower OutputSemiconductor Laser DiodesThermal StabilityWireless Transmission
Six-junction GaAs laser power converts (LPCs) were designed and fabricated. Each subcell is vertically connected by p++-AlGaAs: C/n++-AlGaAs: Si: Te (1:2) tunnel junction with good thermal stability and a record peak tunneling current density of 1867 A/cm 2 . The I-V characteristics of LPCs with an aperture of 10×10 mm 2 were investigated as a function of laser power and temperature. Maximum conversion efficiency and output power of 57.7% and 15.4 W, respectively, and a continuous stable operation at 22.9 W for over 550 hours were demonstrated. The temperature coefficient of conversion efficiency and open-circuit voltage were -0.197%abs/°C and -8.15 mV/°C, respectively, under 808 nm laser illumination of 21.0 W. Furthermore, an array of 100 large-scale (41×46 mm 2 ) LPCs with an output power of 179 W under 1 kW laser irradiation at 20 m wireless transmission was developed.
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High-power lasers for directed-energy applications
P. Sprangle, B. Hafïzi, A. Ting et al. · Applied Optics · 2015 · 204 citations
Jeffrey F. Wheeldon, Christopher E. Valdivia, Alexandre W. Walker et al. · Progress in Photovoltaics Research and Applications · 2010 · 79 citations