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Effects of Annealing Temperature on TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN Ferroelectric Capacitor Prepared by <i>In-Situ</i> Like Consecutive Atomic Layer Deposition
14
Citations
23
References
2022
Year
Materials ScienceMaterials EngineeringMaterial AnalysisHigher Pma TemperatureEngineeringCrystalline DefectsFerroelectric ApplicationSurface ScienceApplied PhysicsAnnealing TemperatureC PmaThin Film Process TechnologyThin FilmsChemical DepositionChemical Vapor DepositionThin Film ProcessingMicrostructureFerroelectric Hzo Film
In this letter, the ferroelectric characteristics and reliability of TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN Metal-Ferroelectric-Metal (MFM) capacitor fabricated using the <i>‘‘in-situ’’</i> like consecutive atomic layer deposition (<i>C-ALD</i>) and the <i>“ex-situ”</i> deposition techniques are compared for different post metal annealing (PMA) temperatures. We suggested that <i>C-ALD</i> deposition improves the interface of the ferroelectric HZO film and the higher PMA temperature further improves the crystal quality. We found that <i>wake-up</i> tends to happen for both types of samples with lower PMA temperature, indicating the possible higher dependence of <i>“wake-up”</i> on crystallinity. Nevertheless, <i>C-ALD</i> and higher PMA temperature are both required to prevent early breakdown. <i>C-ALD</i> samples combined with 600 °C PMA showed the excellent remanent polarization (2P<sub>r</sub>) of 53 μC/cm<sup>2</sup>, endurance properties of 10<sup>11</sup> cycles, and outstanding time-dependent dielectric breakdown (TDDB) characteristics.
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