ZnSnO_y/ZnSnO_x Bilayer Transparent Memristive Synaptic Device for Neuromorphic Computing

Abstract

In this letter, we have investigated synaptic features of a transparent bilayer memristor for neuromorphic computing applications. Our device has shown stable synaptic characteristics like potentiation and depression for repetitive 5000 epochs having 400 conductance pulses each. The device has also shown highly linear synaptic features with linearity of 1.2 and −1.4 for potentiation and depression, respectively. Retention property of bilayer transparent synapse showed good stability for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{5}}$ </tex-math></inline-formula> s at 90 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text {o}}\text{C}$ </tex-math></inline-formula> . Multi-Level Cell (MLC) characteristics were achieved by varying reset stop voltages from −0.7V to −1.0V. The proposed bilayer transparent synapse showed good synaptic characteristics and showed high potential to be used in future neuromorphic computing systems.