Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module

Abstract

Gallium nitride (GaN) high electron mobility transistors (HEMTs) are excellent power semiconductor devices due to their superior material properties compared to their silicon (Si) counterparts. It has demonstrated a fast switching speed with high dV/dt, enabling the designer to push the switching frequency toward the MHz range. However, traditional wire-bonded packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, as it is likely to introduce voltage overshoot, oscillation, parasitic turn-on, and electromagnetic interference (EMI) issues; thus, improved and advanced packaging structures are a must to bridge the gap. Besides, the unique electrical behavior and footprint of GaN compared to Si and Si carbide make them have different requirements for power module integration. To seek a viable solution, a globally optimized double-sided cooled, gate driver integrated 650-V/60-A GaN half-bridge power module is presented herein. The proposed 3-D integrated hybrid solution delivers an optimized package, having power loop inductance and thermal resistance as low as 0.91 nH and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.38~^{\circ }\text{C}$ </tex-math></inline-formula> /W, respectively, which is verified using simulation and experimental results. The overall utility of the design improved proportionately by introducing simple, yet effective electrical/thermal codesign approaches, which can be applied to future power modules, designed for separate applications.