High-Voltage 1064 nm InGaAsP Multijunction Laser Power Converters

Abstract

1064 nm six-junction laser power converters (LPCs) with InGaAsP absorption layers are designed and fabricated. I-V characteristics of the LPCs with an aperture of 8.32 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are investigated as a function of laser power and temperature. Both the open-circuit voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{oc}$ </tex-math></inline-formula> ) and conversion efficiency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\eta $ </tex-math></inline-formula> ) improve with increasing laser power, and reach 4.694 V and 41.2 ± 2%, respectively, under the 1064 nm laser illumination of 1.676 W. The conversion efficiency decreases with the temperature at a rate of −0.09%abs/K independent of laser power. The temperature coefficient of the open-circuit voltage is determined to be −9.77 mV/K at a laser power of 0.174 W and decreases slightly with incident power. This piece of work extends the spectral range for laser power transmission and demonstrates the possibility of even higher voltage 1064 nm LPCs.