Humidity‐Enabled Organic Artificial Synaptic Devices with Ultrahigh Moisture Resistivity

Abstract

Abstract Organic memristors with homogeneous resistive switching behaviors can emulate the functionalities of biological synapses, making them promising candidates for use in brain‐inspired neuromorphic computing. Among various environmental parameters, humidity affecting device operational stability is a critical issue that organic memristors face in practical applications. A high humidity resistant organic memristor is demonstrated here using a small molecule material F 16 CuPc. Unencapsulated devices show excellent moisture stability, maintaining reliable memristive switching behavior after 1 year of exposure to air at 60% high relative humidity and remaining operational when immersed in water for 96 h. A proton conduction mechanism is discovered responsible for the resistive switching effect. The continuously adjustable conductance in F 16 CuPc‐based memristive devices enables the mimicking of biological synapse functions. These results open up a path to a humidity tolerant neuromorphic computing system based on high humidity resistant artificial synapse devices.