Publication | Closed Access
Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory
25
Citations
8
References
2022
Year
Unknown Venue
EngineeringEmerging Memory TechnologyMass Production3D MemoryFerroelectric ApplicationNanoelectronicsMemory DeviceMulti-level Capable 3DMaterials ScienceMaterials EngineeringElectrical EngineeringNand Test Vehicle3D Ic ArchitectureNanotechnologyFlash MemoryCharge TrapMicroelectronicsFerroelasticsFerroelectric Nand DevicesFlexible ElectronicsHighly Stackable 3DApplied PhysicsSemiconductor Memory
In this study, we demonstrate for the first time the multi-level capable 3D ferroelectricNAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4 V program/erase window. We also reported cycling and retention characteristics.
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