2022 · 27 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilityDevice ScalingFerroelectric MaterialsMemory DevicesNanoelectronics3D Nand ArchitectureFerroelectric Random-access MemoryFerroelectric SemiconductorsFerroelectric Thin FilmsGate Stack EngineeringNanoelectronic Memory DevicesRetention CharacteristicsThree-dimensional Memory
In this study, we demonstrate for the first time the multi-level capable 3D ferroelectricNAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4 V program/erase window. We also reported cycling and retention characteristics.
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Ferroelectricity and Antiferroelectricity of Doped Thin HfO<sub>2</sub>‐Based Films
Min Hyuk Park, Young Hwan Lee, Han‐Joon Kim et al. · Advanced Materials · 2015 · 1.1K citations
Scale-free ferroelectricity induced by flat phonon bands in HfO <sub>2</sub>
Hyun‐Jae Lee, Minseong Lee, Kyoungjun Lee et al. · Science · 2020 · 466 citations