Effect of Uniaxial Stress on Germanium p-n Junctions (II)

Abstract

Uniaxial stress effect on germanium backward diodes has been studied. Stress-induced increase in forward current ( I f ) with constant slope of ln I f vs V plots are explained by the model of Wortman et al. Band gap change with stress σ, d E g / d σ, is evaluated as 7.5×10 -12 eV cm 2 /dyn. Stress-induced decrease in tunneling reverse current is interpreted on the basis of model that the effect of stress-induced decrease in tunneling carrier concentration exceeds that of increase in tunneling probability.