Tetsuji Imai

Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition

Koichi Yamaguchi, Kotaro Okamoto, Tetsuji Imai · Japanese Journal of Applied Physics · 1985 · 37 citations

Materials Science, Semiconductors, Electrical Engineering +12

Effect of Uniaxial Stress on Germanium p-n Junctions

Tetsuji Imai, Masao Uchida, Hidekichi Sato et al. · Japanese Journal of Applied Physics · 1965 · 23 citations

Electrical Engineering, Engineering, Physics +15

Morphology of GaAs homoepitaxial layer grown on (111) <i>A</i> substrate planes by organometallic vapor phase deposition

Shunro Fuek, Masasi Umemura, Naoshi Yamada et al. · Journal of Applied Physics · 1990 · 16 citations

Semiconductors, Materials Science, Electrical Engineering +14

The Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP Substrates

Tetsuji Imai, Shunro Fuke, Masahiko testscWatanabe et al. · Japanese Journal of Applied Physics · 1988 · 14 citations

Hetero-epitaxial Growth, Engineering, Crystal Growth Technology +17

Substrate effect on the deposition of Zn3P2 thin films prepared by a hot-wall method

Shunro Fuke, Tetsuji Imai, Kazushige Kawasaki et al. · Journal of Applied Physics · 1989 · 12 citations

Substrate Effect, Optical Materials, Engineering +18