A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation

Abstract

This paper presents a broadband very low <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3^rd</i> ⁃order intermodulation inductor-less low-noise amplifier (LNA) implemented in 0.13 <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i> m CMOS technology. The LNA consists of a common-gate input stage for wideband impedance matching, followed by two parallel common source amplifiers which perform noise and distortion cancellation. Third-order distortion due to amplifier's second-order interaction is further minimized by employing a low second-order distortion PMOS/NMOS input pair. This LNA achieves +16 dBm <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IIP₃</i> in both the 900 MHz and 2 GHz bands. The LNA maintains minimum internal gain 14.5 dB, noise figure below 2.6 dB from 800 MHz-2.1 GHz while drawing 11.6 mA from a supply of 1.5 V.