9B4 - Semiconductor lasers with radiating mirrors

Abstract

High semiconductor gain coefficients (several hundreds of reverse centimeters) allow obtaining light generation by means of thin films imposed on the Fabri-Perot resonator mirror surface. In this case, semiconductor excitation can be produced by either light or an electron beam. With the help of such generators it becomes possible to significantly increase radiation energy and to improve its coherence. Coherent summing up of the radiation energy of several separate semiconductor or other types of lasers can be made through such a kind of system. At present, semiconductor lasers with radiating mirrors are developed by excitation using both an electron beam and a radiation of neodymium laser glass.