CuSbS₂‐Sensitized Inorganic–Organic Heterojunction Solar Cells Fabricated Using a Metal–Thiourea Complex Solution

Abstract

Abstract The device performance of sensitizer‐architecture solar cells based on a CuSbS 2 light sensitizer is presented. The device consists of F‐doped SnO 2 substrate/TiO 2 blocking layer/mesoporous TiO 2 /CuSbS 2 /hole‐transporting material/Au electrode. The CuSbS 2 was deposited by repeated cycles of spin coating of a Cu‐Sb‐thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 °C. Poly(2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4 H ‐cyclopenta[2,1‐ b ;3,4‐ b ′]dithiophene)‐alt‐4,7(2,1,3‐benzothiadiazole)) (PCPDTBT) was used as the hole‐transporting material. The best‐performing cell exhibited a 3.1 % device efficiency, with a short‐circuit current density of 21.5 mA cm −2 , an open‐circuit voltage of 304 mV, and a fill factor of 46.8 %.